Intel and Micron Technology’s joint venture IM Flash Technologies has come up with a 20-nanometer process technology for producing NAND flash memory.

The 20-nanometer process technology produces an 8GB, multi-level cell NAND flash device, which would boost storage in smartphones and tablets while consuming less space on circuit boards.

The new technology will prove very beneficial for space constraint tablets and smartphones as it will release more space for larger batteries.

The 20-nanometer devices will allow that company to produce a 128GB solid-state drive (SSD) that will be smaller than a postage stamp.

Speaking on the new technology, Tom Rampone from Intel's Non-Volatile Memory Solutions Group said, “The Intel-Micron joint venture is a model for the manufacturing industry as we continue to lead the industry in process technology and make quick transitions of our entire fab network to smaller and smaller lithographies."

Mass production of the 20-nanometer products is expected to start sometime during the second half of 2011.

The joint venture will also provide a glimpse of samples of 16GB devices in the second half of this year.